PGH100N8

Power Semiconductor Devices

Thyristors Modules

PGH

PGH100N8

Kyocera offers power modules adopting diverse packaging technologies in industrial fields requiring highly-reliable equipment and for the in-vehicle equipment market.

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Application

Power supplies
Industrial equipment

Production status

Distributor Inventory

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Please check the website of each agency for the latest information.

Production Status

2.Production

Packaging Specifications

Weight	225.000g

Environmental data

RoHS Compliance	Yes

Engineering Documents

Product Specification / Drawing

PGH100N8-file.pdf (2674.75KB)

Series	PGH
Circuit
Outline	E-68
V_RMM V_DRM [V]	800V
I_o [A]	100.0A
I_TSM [A]	2000A
I_GT [mA]	100mA
V_GT [V]	2.5V
Operating Temperature Range	-40℃ ~ 150℃
Safety Standard	UL
Weight	225.000g

FAQ

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All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

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Related Glossary

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A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.

Related Products　Power Semiconductor device

An electrode through which a current flows into a polarized electrical device.

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

Minimum gate voltage required to turn on.

Minimum gate current required to turn on.