Glossary of Electronic Components

Power Semiconductor Devices

An electrode through which a current flows into a polarized electrical device.

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[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.

An electrode from which a current leaves a polarized electrical device.

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A two-terminal semiconductor device which conducts current in one direction, i.e. from anode to cathode, also called a rectifier.

A method of mounting components on a printed circuit board (PCB) by inserting component leads to be soldered into through-holes of a PCB and dipping it into a solder bath to mount the components.

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Abbreviation of Electromagnetic Compatibility. The concept of enabling electronic devices to function without EMI.

Abbreviation of Electromagnetic Interference. A disturbance of an electrical circuit caused by external interference of an electromagnetic origin.

Abbreviation of Electromagnetic Susceptibility. The vulnerability of an electric circuit to a disturbance of electromagnetic origin.

PN type junction rectifying device. Diodes suitable for rectifying high frequency power supply with short reverse recovery time (trr).

Related Products Discretes Fast Recovery Diodes(FRD) FRD/SBD Modules

Minimum gate current required to turn on.

Minimum gate voltage required to turn on.

PN type junction rectifying device. Diodes that rectifies a commercial frequency that is alternating current.

Related Products Discretes General Rectifier Diodes General Rectifier Diode Modules

Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.

Range of junction temperature while operating.

Peak forward voltage at specified forward current.

Peak reverse current at specified reverse voltage

A soldering method in which solder is applied to electronic components and then melted in a reflow oven to permanently mount them to a printed circuit board (PCB).

Allowable peak off-state voltage repetitively applicable between anode and cathode.

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

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Diodes utilizing potential barrier (schottky barrier) formed at a junction between metal electrode and semiconductor.

Related Products Discretes Schottky Barrier Diodes(SBD) FRD/SBD Modules

 

Abbreviation of Surface Mount Device. Components suitable for SMT equipment.

Abbreviation of Surface Mount Technology. A method of producing electronic circuits on a printed circuit board (PCB) by applying solder paste and placing components on the PCB's surface before the solder is melted in a reflow oven.

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Range of ambient temperature while not operating.

Non-repetitive maximum peak forward current in one cycle of 50Hz sin wave.

Non-repetitive maximum peak on-state current in one cycle of 50Hz sin wave.

Allowable peak reverse voltage non-repetitively applicable to diode.

Temperature difference per watt between two points, such as junction and ambient, or junction and case after thermal balance is established Rth(j-c): junction to case, Rth(j-l): junction to lead, Rth(j-a): junction to ambient.

A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.

Related Products Power Semiconductor device

A semiconductor device used to amplify or control current.