PDMB400W12 2.Production

Kyocera offers power modules adopting diverse packaging technologies in industrial fields requiring highly-reliable equipment and for the in-vehicle equipment market.

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Specifications

Series	PDMB
Circuit
Outline	E-56
V_CES [V]	1200V
I_C [A]	400A
V_ce(sat.)(typ.) [V]	1.50V
t_on (typ.) [µs]	0.310µs
t_off (typ.) [µs]	1.090µs
Diode I_F [A]	400A
Diode V_F (typ.) [V]	2.00V
Diode t_rr (typ.) [µs]	0.250µs
IGBT R_thj-c (Max.) [°C/W]	0.065°C/W
FRD R_thj-c (Max.) [°C/W]	0.105°C/W
Safety Standard	UL
Weight	450.000g

Packaging Specifications

Weight	450.000g

Engineering Documents

Product Specification / Drawing

PDMB400W12-file.pdf (249.39KB)

Environmental data

RoHS Compliance	Yes

FAQ

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As for discontinued models, please click here.

All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

Related Glossary

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Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.