30GHA20 2.Production

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.

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Application

Power supplies
Industrial Equipment

Specifications

Series	Axial
Outline	DO-201AD
V_RRM [V]	200V
I_o [A]	3.0A
I_FSM [A]	60.0A
I_R [mA]	0.200mA
V_FM [V]	0.90V
@IFM [A]	3.0A
Operating Temperature Range	-40℃ ~ 150℃
R_th(j-c) [°C/W]	13.0 (j-l)°C/W
Connection type	A
Packaging style	Bulk
Quantity per Package	2000
Weight	1.050g

Remarks

Low-IR type

Packaging Specifications

Packaging style	Bulk
Quantity per Package	2000
Weight	1.050g

Engineering Documents

Product Specification / Drawing

30GHA20-file.pdf (2667.78KB)

Environmental data

RoHS Compliance	Yes

RoHS_30GHA20.pdf (458.79KB)

TSCA_30GHA20.pdf (47.61KB)

FAQ

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When connecting one-chip type elements such as axial type products or miniature SMD products, 1:0.6 (62.5% : 37.5%) would be an approx. value as a general theory. Since two-chip in an element such as represented by the TO-220 type is a package and has good heat balance, the good flow dividing ratio would be 1:0.8 (55.6% : 44.4%).

All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

Related Glossary

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Diodes utilizing potential barrier (schottky barrier) formed at a junction between metal electrode and semiconductor.

A method of mounting components on a printed circuit board (PCB) by inserting component leads to be soldered into through-holes of a PCB and dipping it into a solder bath to mount the components.

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.

Range of ambient temperature while not operating.