I3697PJA160 2.Production

A high-power device is a product for high-voltage/current application such as a stud/flat diode and thyristor.High-power devices are used for power plants, railways, ships, and large power sources that require quality products with high reliability.

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Application

Power supplies
Industrial equipment

Specifications

V_RRM [V]	1600V
V_RSM [V]	1700V
I_F(RMS) [A]	4712A
I_o [A]	3000.0A
I_FSM [A]	38000.0A
I²t [A²s]	7.2 × 10⁶A²s
I_RM [mA]	60mA
V_FM [V]	2.15V
Operating Temperature Range	-40℃ ~ 160℃
T_stg [°C]	-40～+160℃
R_th(j-c) [°C/W]	0.016°C/W
Mounting Force [kN] ※	34 (30.5)kN
Weight	790.000g

Packaging Specifications

Weight	790.000g

Engineering Documents

Product Specification / Drawing

I3697PJA160-file.pdf (266.68KB)

3D Models

STEP_I3697PJA160.zip (17.50KB)

Environmental data

RoHS Compliance	Contact us

FAQ

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All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

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Related Glossary

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PN type junction rectifying device. Diodes that rectifies a commercial frequency that is alternating current.

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

Peak reverse current at specified reverse voltage

Peak forward voltage at specified forward current.