I1806PA160 2.Production

A high-power device is a product for high-voltage/current application such as a stud/flat diode and thyristor.High-power devices are used for power plants, railways, ships, and large power sources that require quality products with high reliability.

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Application

Power supplies
Industrial equipment

Specifications

Series	PA
V_RMM V_DRM [V]	1600V
V_DSM [V]	1600V
V_RSM [V]	1700V
I_T(RMS) [A]	2356A
I_o [A]	1500.0A
I_TSM [A]	13500A
I²t [A²s]	9.11 × 10⁵A²s
I_DM I_RM [mA]	100mA
V_TM [V]	2.49V
dv/dt [V/µs]	1000V/µs
di/dt [A/µs]	200A/µs
V_GT [V]	3.0V
Operating Temperature Range	-40℃ ~ 125℃
R_th(j-c) [°C/W]	0.018°C/W
Mounting Force [kN] ※	20 (18)kN
Weight	180.000g

Packaging Specifications

Weight	180.000g

Engineering Documents

Product Specification / Drawing

I1806PA160-file.pdf (403.23KB)

3D Models

STEP_I1806PA160.zip (44.50KB)

Environmental data

RoHS Compliance	Contact us

FAQ

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All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

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Related Glossary

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A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.

Related Products　Power Semiconductor device

An electrode through which a current flows into a polarized electrical device.

Peak reverse current at specified reverse voltage

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.