- Power Semiconductor Devices
Power Semiconductor Devices: Low-Profile LPTO-263
Introducing Kyocera’s LPTO-263 power semiconductor devices, which have a lower height and higher heat dissipation than existing products (TO-263 package outline).
Features
- Low Profile: Approximately 60% lower thickness than the TO-263 package outline.
- High Heat Dissipation: Chip is connected to the external terminal by a clip to increase the area of the heat sink on the rear.
- Compatibility: Similar design as the TO-263 package outline.
- Avalanche-guaranteed SBDs are also available in the lineup.
Size Comparison with the TO-263
By reducing the height, the thickness has been decreased by approximately 60% compared to the TO-263.
Comparison of Heat Generation with the TO-263
In 10A/30V SBD
Heat dissipation has been improved by enlarging the terminal surface and applying internal soldering.
In 30A/30V SBD
Compared to the TO-263, the temperature rise is reduced by approximately 35 to 50%, and heat dissipation is also improved.
Data is based on research by Kyocera.
Product List
Type | Part Number | IO | VRRM | VFM@IFM | IRM@VRRM | Trr@IFM | Guaranteed Junction Temperature | AEC-Q101 |
---|---|---|---|---|---|---|---|---|
FRD | 10A | 400V | 1.35V | 20μA | 45ns | -40℃ to +150℃ | Yes | |
20A | 400V | 1.30V | 20μA | 45ns | -55℃ to +175℃ | Yes | ||
20A | 300V | 1.30V | 25μA | 33ns | - | |||
SBD | 10A | 65V | 0.65V | 0.1mA | - | -40℃ to +150℃ | - | |
10A | 80V | 0.69V | 0.1mA | - | - | |||
10A | 120V | 0.84V | 0.1mA | - | - | |||
20A | 80V | 0.71V | 0.15mA | - | Yes | |||
20A | 120V | 0.87V | 0.1mA | - | - | |||
30A | 80V | 0.79V | 0.1mA | - | - | |||
30A | 120V | 0.90V | 0.1mA | - | - | |||
30A | 30V | 0.50V | 1.5mA | - | - | |||
10A | 65V | 0.61V | 0.4mA | - | - | |||
20A | 45V | 0.54V | 0.6mA | - | Yes | |||
30A | 45V | 0.55V | 1.0mA | - | - | |||
SBD | 30A | 90V | 0.79V | 0.1mA | 195W | Yes |
Applications
Power supplies, industrial equipment