UCHD30A09 2.Production
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
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Specifications
| Series | TU |
|---|---|
| AEC-Q |
AEC-Q101 |
| Outline |
TO-263LP
|
| VRRM [V] | 90V |
| Io [A] | 30.0A |
| IFSM [A] | 250.0A |
| IR [mA] | 0.100mA |
| VFM [V] | 0.79V |
| PRRSM [W] | 195W |
| Operating Temperature Range | -40℃ ~ 150℃ |
| Rth(j-c) [°C/W] | 1.50°C/W |
| Connection type | E |
| Packaging style | Reel |
| Quantity per Package | 2000 |
| Weight | 0.590g |
Packaging Specifications
| Packaging style | Reel |
|---|---|
| Quantity per Package | 2000 |
| Weight | 0.590g |
Engineering Documents
Product Specification / Drawing
UCHD30A09-file.pdf (1535.33KB)
3D Models
STEP_LPTO263.zip (52.73KB)
Environmental data
| RoHS Compliance | Yes |
|---|
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