UCHD30A09
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
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Production Status | 2.Production |
Packaging Specifications
Packaging style | Reel |
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Quantity per Package | 2000 |
Weight | 0.590g |
Environmental data
RoHS Compliance | Yes |
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Engineering Documents
Product Specification / Drawing
UCHD30A09-file.pdf (1535.33KB)3D Models
STEP_LPTO263.zip (52.73KB)Series | TU |
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AEC-Q |
AEC-Q101 |
Outline |
TO-263LP |
VRRM [V] | 90V |
Io [A] | 30.0A |
IFSM [A] | 250.0A |
IR [mA] | 0.100mA |
VFM [V] | 0.79V |
PRRSM [W] | 195W |
Operating Temperature Range | -40℃ ~ 150℃ |
Rth(j-c) [°C/W] | 1.50°C/W |
Connection type | E |
Packaging style | Reel |
Quantity per Package | 2000 |
Weight | 0.590g |
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