TO-247 2pin (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
Power Semiconductor Devices Technical Information View All
Standard Diode Modules with Low Thermal Resistance
Kyocera’s diode modules feature high heat dissipation capabilities by optimizing materials and joint conditions resulting in stable rectification…
Power Semiconductor Devices: Low-Profile LPTO-263
Introducing Kyocera’s new LPTO-263 power semiconductor devices, which have a lower height and higher heat dissipation than existing products (TO-…