SiC Power Module and GaN Power Module

Introducing compact and ultra-efficient power modules developed based on SiC technology and proprietary GaN technology.

SiC Power Module

To meet the needs of the rapidly expanding market for electrical and hybrid vehicle inverters, KYOCERA AVX (Salzburg) has developed a compact, ultra-efficient power module based on the latest SiC technology. Due to its high power density, this module can be used in many other applications where high switching speeds are required.

Products from this area are also known by the following keywords:
Half-bridge module, B6 full bridge, Si / SiC power module

Our controls support the focal areas of future mobility:
Electromobility, renewable energy, charging infrastructure, H2 applications / drives, fuel cell vehicles

Features

Small design package
High power density
Integrated metal baseplate available for cooling
Various performance classes available
Qualified according to ECPE AGQ 324 (planned)
Low stray inductances
Scalable switching architecture to optimize cost
Available in custom Half-Bridge & B6 Bridge configurations

Application-Specific Data

Nom. Voltage	470V	810V
Max. Breakdown Voltage	750V	1200V
Max. Current	500A	500A
Temperature	-40℃ to +175℃

Typical Applications

Inverters (E-Motor, DC-DC, Solar, etc)
EV charging stations
Motor drives

GaN Power Module

To meet the needs of the rapidly expanding market for electrical and hybrid vehicle inverters, KYOCERA AVX (Salzburg) has developed a compact, ultra-efficient power module based on the latest GaN technology. Due to its high power density, this module can be used in many other applications where high switching speeds are required.

Products from this area are also known by the following keywords:
Half-bridge module, B6 full bridge

Our controls support the focal areas of future mobility:
Electromobility, renewable energy, charging infrastructure, H2 applications / drives, fuel cell vehicles