I1263PA160 2.양산품

A high-power device is a product for high-voltage/current application such as a stud/flat diode and thyristor.High-power devices are used for power plants, railways, ships, and large power sources that require quality products with high reliability.

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애플리케이션

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사양

시리즈	PA
V_RMM V_DRM [V]	1600V
V_DSM [V]	1600V
V_RSM [V]	1700V
I_T(RMS) [A]	1571A
I_o [A]	1000.0A
I_TSM [A]	10200A
I²t [A²s]	5.2 × 10⁵A²s
I_DM I_RM [mA]	100mA
V_TM [V]	2.75V
dv/dt [V/µs]	1000V/µs
di/dt [A/µs]	200A/µs
V_GT [V]	3.0V
사용온도범위	-40℃ ~ 125℃
R_th(j-c) [°C/W]	0.027°C/W
Mounting Force [kN] ※	20 (15)kN
제품 질량	140.000g

포장 사양

제품 질량	140.000g

엔지니어링 문서

규격표 / 도면

I1263PA160-file.pdf (385.32KB)

3D Models

STEP_I1263PA160.zip (45.61KB)

Environmental data

RoHS 규제 대응	문의

FAQ

일람

All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

Related Glossary

일람

A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.

Related Products　Power Semiconductor device

An electrode through which a current flows into a polarized electrical device.

Peak reverse current at specified reverse voltage

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.