- 전원 장치
|RoHS 규제 대응||문의|
규격표 / 도면PGH200N8-file.pdf (3330.52KB)
|VRMM VDRM [V]||800V|
|사용온도범위||-40℃ ~ 150℃|
All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.
The followings are recommended storage conditions for our power device products:
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH
A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.
Related Products Power Semiconductor device
An electrode through which a current flows into a polarized electrical device.
[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.
Minimum gate voltage required to turn on.
Minimum gate current required to turn on.