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  7. AMVST10A15

전자부품

AMVST10A15 1.계획중

TO277.png
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
TO277.png
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애플리케이션

  • 전원 장치
  • 산업기기
  • 자동차 (인포테인먼트)
  • 자동차 (운전 / 안전 장비)

사양

시리즈 MV
AEC-Q AEC-Q101
Outline TO-277
outline_a-10.png
VRRM [V] 150V
Io [A] 10.0A
IFSM [A] 200.0A
IR [mA] 0.001mA
VFM [V] 0.82V
@IFM [A] 10.0A
사용온도범위 -55℃ ~ 175℃
Rth(j-c) [°C/W] 2.5°C/W
Connection type L
포장 Reel
Quantity per Package 3000
제품 질량 0.086g
비고

Low-IR type

포장 사양

포장 Reel
Quantity per Package 3000
제품 질량 0.086g

FAQ

일람

All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

Related Glossary

일람

Diodes utilizing potential barrier (schottky barrier) formed at a junction between metal electrode and semiconductor.

Related Products　Discretes Schottky Barrier Diodes（SBD)　FRD/SBD Modules

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.

Range of ambient temperature while not operating.

추천 시리즈

디스크리트 쇼트키 배리어 다이오드(SBD)
MV (SBD)
MV (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
디스크리트 쇼트키 배리어 다이오드(SBD)
ME (SBD)
ME (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
디스크리트 쇼트키 배리어 다이오드(SBD)
MC (SBD)
MC (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.

문의 및 지원

문의
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제품번호검색

예) KGM03CR50J225MH、145652060201829+T

키워드 검색

예) RoHS、AEC-Q200

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