PCFMB100W12 2.양산품

Kyocera offers power modules adopting diverse packaging technologies in industrial fields requiring highly-reliable equipment and for the in-vehicle equipment market.

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사양

시리즈	PCFMB
Circuit
Outline	E-74
V_CES [V]	1200V
I_C [A]	100A
V_ce(sat.)(typ.) [V]	1.50V
t_on (typ.) [µs]	0.170µs
t_off (typ.) [µs]	0.690µs
Diode I_F [A]	100A
Diode V_F (typ.) [V]	2.00V
Diode t_rr (typ.) [µs]	0.170µs
IGBT R_thj-c (Max.) [°C/W]	0.310°C/W
FRD R_thj-c (Max.) [°C/W]	0.720°C/W
Safety Standard	UL
제품 질량	150.000g

포장 사양

제품 질량	150.000g

엔지니어링 문서

규격표 / 도면

PCFMB100W12-file.pdf (228.97KB)

Environmental data

RoHS 규제 대응	Yes

FAQ

일람

As for discontinued models, please click here.

All values except for the graph of Junction capacitance vs. Reverse Voltage of SBD products are maximum values, which are guaranteed. Graphs of Junction capacitance vs. Reverse Voltage show typical values (TYP). The curves of the average forward current rating are formed by connecting points where the junction temperature reaches 150℃.

MSL standards are defined for SMDs to be reflow-soldered, and all Kyocera products are MSL: 1. (No need for damp proof packing)

The followings are recommended storage conditions for our power device products:

[Before unpacking]
Storage temperature: 5 to 35℃ / Storage humidity: 45 to 70% RH

Related Glossary

일람

Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.