UCHD30A09 2.양산품
![LPTO263.png](/assets/products/power-semicon/LPTO263.png)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
![LPTO263.png](/assets/products/power-semicon/LPTO263.png)
Distributor Inventory
사양
시리즈 | TU |
---|---|
AEC-Q |
AEC-Q101 |
Outline |
TO-263LP![]() |
VRRM [V] | 90V |
Io [A] | 30.0A |
IFSM [A] | 250.0A |
IR [mA] | 0.100mA |
VFM [V] | 0.79V |
PRRSM [W] | 195W |
사용온도범위 | -40℃ ~ 150℃ |
Rth(j-c) [°C/W] | 1.50°C/W |
Connection type | E |
포장 | Reel |
Quantity per Package | 2000 |
제품 질량 | 0.590g |
포장 사양
포장 | Reel |
---|---|
Quantity per Package | 2000 |
제품 질량 | 0.590g |
엔지니어링 문서
규격표 / 도면
3D Models
Environmental data
RoHS 규제 대응 | Yes |
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